View MRF282_1070453.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 MRF282s MRF282z motorola rf device data the rf submicron mosfet line
nchannel enhancementmode lateral mosfets designed for class a and class ab pcn and pcs base station applications at frequencies up to 2600 mhz. suitable for fm, tdma, cdma, and multicarrier amplifier applications. ? specified twotone performance @ 2000 mhz, 26 volts output power = 10 watts (pep) power gain = 11 db efficiency = 30% intermodulation distortion = 30 dbc ? specified singletone performance @ 2000 mhz, 26 volts output power = 10 watts (cw) power gain = 11 db efficiency = 40% ? characterized with series equivalent largesignal impedance parameters ? sparameter characterization at high bias levels ? excellent thermal stability ? capable of handling 10:1 vswr, @ 26 vdc, 2000 mhz, 10 watts (cw) output power ? gold metallization for improved reliability maximum ratings rating symbol value unit drainsource voltage v dss 65 vdc gatesource voltage v gs 20 vdc total device dissipation @ t c = 25 c derate above 25 c p d 60 0.34 watts w/ c storage temperature range t stg 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 2.9 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainsource breakdown voltage (v gs = 0, i d = 10 m adc) v (br)dss 65 e e vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0) i dss e e 1.0 m adc gatesource leakage current (v gs = 20 vdc, v ds = 0) i gss e e 1.0 m adc note caution mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF282/d semiconductor technical data 10 w, 2000 mhz, 26 v lateral nchannel broadband rf power mosfets case 45803, style 1 (MRF282s) case 458a01, style 1 (MRF282z) ? motorola, inc. 1997 rev 1
MRF282s MRF282z 2 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics gate threshold voltage (v ds = 10 vdc, i d = 50 m adc) v gs(th) 2.0 3.0 4.0 vdc drainsource onvoltage (v gs = 10 vdc, i d = 0.5 adc) v ds(on) e 0.4 0.6 vdc forward transconductance (v ds = 10 vdc, i d = 0.5 adc) g fs 0.5 0.7 e s gate quiescent voltage (v ds = 26 vdc, i d = 75 madc) v gs(q) 3.0 4.0 5.0 vdc dynamic characteristics input capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c iss e 15 e pf output capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c oss e 8.0 e pf reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c rss e 0.45 e pf functional tests (in motorola test fixture) commonsource power gain (v dd = 26 vdc, p out = 10 w (pep), i dq = 75 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) g ps 11 12.6 e db drain efficiency (v dd = 26 vdc, p out = 10 w (pep), i dq = 75 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) h 30 34 e % intermodulation distortion (v dd = 26 vdc, p out = 10 w (pep), i dq = 75 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) i md e 32.5 30 dbc input return loss (v dd = 26 vdc, p out = 10 w (pep), i dq = 75 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) i rl 10 14 e db commonsource power gain (v dd = 26 vdc, p out = 10 w (pep), i dq = 75 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) g ps 11 12.6 e db drain efficiency (v dd = 26 vdc, p out = 10 w (pep), i dq = 75 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) h e 30 e % intermodulation distortion (v dd = 26 vdc, p out = 10 w (pep), i dq = 75 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) i md e 32.5 e dbc input return loss (v dd = 26 vdc, p out = 10 w (pep), i dq = 75 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) i rl 10 14 e db commonsource power gain (v dd = 26 vdc, p out = 10 w cw, i dq = 75 ma, f = 2000.0 mhz) g ps 11 12.3 e db drain efficiency (v dd = 26 vdc, p out = 10 w cw, i dq = 75 ma, f = 2000.0 mhz) h 40 45 e % output mismatch stress (v dd = 26 vdc, p out = 10 w cw, i dq = 75 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz, load vswr = 10:1, all phase angles at frequency of test) y no degradation in output power
3 MRF282s MRF282z motorola rf device data figure 1. schematic of 1.93 2.0 ghz broadband test circuit b1, b2, b3, ferrite bead, ferroxcube, 56590653b b4, b5, b6 c1, c17 470 m f, electrolytic capacitor, mallory c2, c4, c12 0.64.5 pf, variable capacitor, johanson c3, c15 0.1 m f, chip capacitor, kemet c5, c14 1000 pf, b case chip capacitor, atc c6, c8, c10, c13 12 pf, b case chip capacitor, atc c7 1.8 pf, b case chip capacitor, atc c9, c11 100 pf, b case chip capacitor, atc c16 0.42.5 pf, variable capacitor, johanson l1 straight wire, 21 awg, 0.3 l2 8 turns, 0.042 id, 24 awg, enamel l3 9 turns, 0.046 id, 26 awg, enamel l4 3 turns, 0.048 id, 25 awg, enamel r1, r2, r3, 12 w , 0.2 w chip resistor, rohm r4, r5, r6 z1 0.155 x 0.08 microstrip z2 0.280 x 0.08 microstrip z3 0.855 x 0.08 microstrip z4 0.483 x 0.08 microstrip z5 0.200 x 0.330 microstrip z6 0.220 x 0.330 microstrip z7 0.490 x 0.330 microstrip z8 0.510 x 0.08 microstrip z9 0.990 x 0.08 microstrip z10 0.295 x 0.08 microstrip board 35 mils glass teflon ? , arlon gx300, e r = 2.55 input/output connectors type n flange mount rf input rf output z10 z1 z2 z3 z4 z5 z6 z7 z9 v gg c1 c8 c9 l2 c6 c2 c4 c10 c11 l3 l1 c7 r1 b1 c3 r2 b2 c5 r3 b3 r4 b4 c14 r5 b5 c15 r6 b6 c17 c16 c13 z8 c12 l4 dut + + v dd
MRF282s MRF282z 4 motorola rf device data rf input z10 z1 z2 z3 z4 z5 z6 z7 z9 v gg (bias) v dd c1 c6 c2 c3 l4 l1 c9 r1 b1 c4 r2 b2 c7 r3 b3 c17 c15 z8 c12 dut + c5 c8 l2 l3 l5 z11 c16 r6 b6 c13 r5 b4 c10 r4 b5 + c11 c14 + + figure 2. schematic of 1.81 1.88 ghz broadband test circuit b1, b2, b3, ferrite bead, fair rite, (2743021446) b4, b5, b6 c1, c16 470 m f, 63 v, electrolytic capacitor, mallory c2, c9, c12 0.64.5 pf, variable capacitor, johanson gigatrim c3 0.84.5 pf, variable capacitor, johanson gigatrim c4, c13 0.1 m f, chip capacitor c5, c14 100 pf, b case chip capacitor, atc c6, c8, c11, c15 12 pf, b case chip capacitor, atc c7, c10 1000 pf, b case chip capacitor, atc c17 0.1 pf, b case chip capacitor, atc l1 3 turns, 27 awg, 0.087 od, 0.050 id, 0.053 long, 6.0 nh l2 5 turns, 27 awg, 0.087 od, 0.050 id, 0.091 long, 15 nh l3, l4 9 turns, 26 awg, 0.080 od, 0.046 id, 0.170 long, 30.8 nh l5 4 turns, 27 awg, 0.087 od, 0.050 id, 0.078 long, 10 nh r1, r2, r3, 12 w , 1/8 w fixed film chip resistor, r4, r5, r6 0.08 x 0.13 w1, w2 berrylium copper, 0.010 x 0.110 x 0.210 z1 0.122 x 0.08 microstrip z2 0.650 x 0.08 microstrip z3 0.160 x 0.08 microstrip z4 0.030 x 0.08 microstrip z5 0.045 x 0.08 microstrip z6 0.291 x 0.08 microstrip z7 0.483 x 0.330 microstrip z8 0.414 x 0.330 microstrip z9 0.392 x 0.08 microstrip z10 0.070 x 0.08 microstrip z11 1.110 x 0.08 microstrip board 1 = 0.03 glass teflon ? , arlon gx03005522, 2 oz copper, 3 x 5 dimenson, 0.030 , e r = 2.55 dc supply rf output
5 MRF282s MRF282z motorola rf device data b1, b2, b3, ferrite bead, ferroxcube, 56590653b c1, c20 470 m f, 63 v, electrolytic capacitor, mallory c2 0.01 m f, b case chip capacitor, atc c3, c10, c15 0.64.5 pf, variable capacitor, johanson c4, c16 0.02 m f, b case chip capacitor, atc c5 100 m f, 50 v, electrolytic capacitor, sprague c6, c7, c9, 12 pf, b case chip capacitor, atc c14, c17 c8, c13 51 pf, b case chip capacitor, atc c11, c12 0.3 pf, b case chip capacitor, atc c18 0.1 m f, chip capacitor, kemet c19 0.42.5 pf, variable capacitor, johanson l1 8 turns, 0.042 id, 24 awg, enamel l2 9 turns, 0.046 id, 26 awg, enamel q1 npn, 15 w, bipolar transistor, mjd310 q2 pnp, 15 w, bipolar transistor, mjd320 r1 200 w , axial, 1/4 w resistor r2 1.0 k w , 1/2 w potentiometer r3 13 k w , axial, 1/4 w resistor r4, r6, r7 390 w , 1/8 w chip resistor, rohm r5 1.0 w , 10 w 1% resistor, dale r8, r9, r10 12 w , 1/8 w chip resistor, rohm z1 0.624 x 0.08 microstrip z2 0.725 x 0.08 microstrip z3 0.455 x 0.08 microstrip z4 0.530 x 0.330 microstrip z5 0.280 x 0.330 microstrip z6 0.212 x 0.330 microstrip z7 0.408 x 0.08 microstrip z8 0.990 x 0.08 microstrip z9 0.295 x 0.08 microstrip board 35 mils glass teflon ? , arlon gx0300, e r = 2.55 input/output type n flange mount rf5522, connectors, omni spectra figure 3. schematic of class a test circuit rf input rf output dut z9 z1 z2 z3 z4 z5 z6 z8 v gg v dd q1 q2 c2 c4 l1 c7 c3 c10 c13 c14 l2 c19 c18 c20 c15 r1 b1 r8 v dd c5 c6 c8 c9 r9 b2 r10 b3 c16 c11 z7 c12 c17 c1 r2 r3 r4 r5 r6 r7 + + +
MRF282s MRF282z 6 motorola rf device data typical characteristics g ps , power gain (db) g ps , gain (db) figure 4. output power & power gain versus input power p in , input power (watts) 2 0 0.5 6 14 10 figure 5. output power versus frequency 4 1850 f, frequency (mhz) 14 10 0.25 0.75 1.0 p out , output power (watts) 1800 2000 0.0 p out , output power (watts) 16 14 12 10 g ps , gain (db) 1900 1950 figure 6. intermodulation distortion versus output power 10 p out , output power (watts) pep 70 figure 7. power gain and intermodulation distortion versus supply voltage 12 v dd , drain supply voltage (vdc) 10 10 imd, intermodulation distortion (dbc) figure 8. intermodulation distortion versus output power 0.1 p out , output power (watts) pep 60 10 20 figure 9. power gain versus output power p out , output power (watts) pep 9 1.0 13 10 1.0 0.1 0.1 10 11 12 11 8 20 22 16 40 30 10 imd, intermodulation distortion (dbc) 40 35 imd, intermodulation distortion (dbc) 24 26 28 14 13 30 25 20 15 60 50 40 30 6 12 8 p out = 10 w (pep) i dq = 75 ma f1 = 2000.0 mhz f2 = 2000.1 mhz g ps imd 3rd order 7th order 5th order p in = 0.2 w 0.8 w v dd = 26 vdc f 1 = 2000.0 mhz f 2 = 2000.1 mhz 1.0 50 ma i dq = 125 ma 100 ma 75 ma v dd = 26 vdc f 1 = 2000.0 mhz f 2 = 2000.1 mhz 13 11 0.5 w 4 12 8 20 18 v dd = 26 vdc i dq = 75 ma f 1 = 2000.0 mhz f 2 = 2000.1 mhz 50 v dd = 26 vdc i dq = 75 ma f = 2000 mhz single tone p out g ps 9 25 ma 50 ma i dq = 125 ma 100 ma 75 ma 25 ma v dd = 26 vdc i dq = 75 ma single tone
7 MRF282s MRF282z motorola rf device data f, frequency mhz) 2000 1970 1950 1930 14 12 11 10 39 37 36 35 collector efficiency (%) input vswr g ps , gain (db) 13 38 g ps vswr h p out = 10 w (pep) v dd = 26 vdc i dq = 75 ma 1990 1.6:1 1.2:1 i d , drain current (adc) figure 10. class a dc safe operating area v dd , drain supply voltage (vdc) figure 11. capacitance versus drain source voltage v ds , drain source voltage (volts) 1.5 .5 0 28 24 20 16 12 8 4 0 t flange = 75 c t flange = 100 c t j = 175 c 28 12 20 4 0 100 1.0 0.1 figure 12. class a third order intercept point p in , input power (dbm) 40 30 20 10 60 40 20 0 20 40 c, capacitance (pf) p out , output power (dbm) 2 1 10 v dd = 26 vdc i d = 600 madc f 1 = 2000.0 mhz f 2 = 2000.1 mhz 3rd order c iss 24 figure 13. performance in broadband circuit c oss c rss 16 8 figure 14. mtbf factor versus junction temperature t j , junction temperature ( c) 250 200 150 100 50 0 1.e+09 1.e+08 1.e+06 1.e+05 1.e+04 1.e+03 mtbf factor (hours x amps ) this graph displays calculated mtbf in hours x ampere 2 drain cur- ent. life tests at elevated temperature have correlated to better than 10% of the theoretical prediction for metal failure. divide mtbf factor by i d 2 for mtbf in a particular application. 50 30 10 10 30 1.e+07 toi point 1980 1960 1940 1.4:1 fundamental 2
MRF282s MRF282z 8 motorola rf device data figure 15. series equivalent input and output impedence f mhz z in (1) w z ol * w 1800 1860 1900 1960 2.1 + j1.0 2.0 + j1.2 2.05 + j1.15 1.9 + j1.4 3.8 j0.15 3.77 j0.13 3.75 j0.1 3.65 + j0.1 z in (1)= conjugate of fixture gate terminal impedance. z ol * = conjugate of the optimum load impedance at given output power, voltage, imd, bias current and frequency. v cc = 26 v, i cq = 75 ma, p out = 10 w (pep) +j1 +j2 +j3 +j5 + j0.5 + j0.2 j1 j2 j3 j5 j10 j0.5 j0.2 + j10 0.0 0.5 12 3 5 z ol * z in z o = 5 w 1.8 ghz f = 1.8 ghz 2000 1.85 + j1.6 3.55 + j0.2 0.2 2 ghz 2 ghz
9 MRF282s MRF282z motorola rf device data table 1. common source sparameters at v ds = 24 vdc, i d = 600 madc f gh s 11 s 21 s 12 s 22 ghz |s 11 | |s 21 | |s 12 | |s 22 | 0.1 0.916 -81 33.41 128 0.016 41 0.498 -60 0.2 0.850 -118 20.81 101 0.020 16 0.499 -88 0.3 0.843 -135 14.45 84 0.020 2 0.532 -106 0.4 0.848 -144 10.61 73 0.019 -7 0.552 -117 0.5 0.861 -151 8.34 63 0.017 -15 0.609 -125 0.6 0.872 -154 6.61 55 0.015 -19 0.647 -132 0.7 0.882 -158 5.43 47 0.013 -23 0.675 -139 0.8 0.895 -160 4.54 41 0.011 -24 0.728 -145 0.9 0.901 -163 3.82 34 0.009 -24 0.740 -150 1.0 0.902 -164 3.27 29 0.008 -18 0.773 -160 1.1 0.909 -166 2.83 24 0.006 -6 0.794 -164 1.2 0.917 -168 2.48 19 0.006 10 0.813 -168 1.3 0.923 -169 2.18 14 0.006 14 0.826 -172 1.4 0.931 -171 1.94 10 0.006 15 0.842 -176 1.5 0.933 -172 1.73 6 0.005 43 0.853 -179 1.6 0.934 -174 1.55 2 0.007 60 0.859 177 1.7 0.937 -175 1.40 -1 0.009 60 0.869 174 1.8 0.938 -176 1.27 -4 0.010 63 0.869 171 1.9 0.942 -177 1.16 -7 0.011 71 0.874 169 2.0 0.943 -178 1.06 -10 0.014 73 0.876 166 2.1 0.946 -178 0.98 -12 0.016 71 0.884 163 2.2 0.950 -179 0.92 -15 0.019 67 0.897 160 2.3 0.953 -180 0.86 -18 0.019 63 0.903 157 2.4 0.954 179 0.80 -21 0.020 62 0.907 154 2.5 0.955 178 0.76 -24 0.020 65 0.907 151 2.6 0.961 177 0.71 -26 0.024 69 0.912 149
MRF282s MRF282z 10 motorola rf device data package dimensions case 45803 issue c (MRF282s) c j n e h b k 2 pl p 1 2 3 dim min max min max millimeters inches a 0.197 0.203 5.00 5.16 b 0.157 0.163 3.99 4.14 c 0.085 0.110 2.16 2.79 d 0.047 0.053 1.19 1.35 e 0.006 0.010 0.15 0.25 h 0.025 0.031 0.64 0.79 j 0.006 0.010 0.15 0.25 k 0.060 0.100 1.52 2.54 n 0.177 0.183 4.50 4.65 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. drain 2. gate 3. source p 0.137 0.143 3.48 3.63 d 2 pl a u 4 pl w 4 pl v 4 pl u 0.000 0.005 0.00 0.13 v 0.030 0.040 0.76 1.02 w 0.017 0.023 0.43 0.58 case 458a01 issue o (MRF282z) b k 2 pl 1 2 d 2 pl a u 4 pl w 4 pl v 4 pl p 3 c n e dim min max min max millimeters inches a 0.197 0.203 5.00 5.16 b 0.157 0.163 3.99 4.14 c 0.085 0.110 2.16 2.79 d 0.047 0.053 1.19 1.35 e 0.006 0.010 0.15 0.25 h 0.000 0.004 0.00 0.10 j 0.006 0.010 0.15 0.25 k 0.050 0.080 1.27 2.03 n 0.177 0.183 4.50 4.65 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension h (package coplanarity): the bottom of the leads and reference plane t must be coplanar within dimension h. style 1: pin 1. drain 2. gate 3. source p 0.137 0.143 3.48 3.63 s 0.020 0.040 0.51 1.02 u 0.000 0.005 0.00 0.13 v 0.030 0.040 0.76 1.02 w 0.017 0.023 0.43 0.58 y 0.030 0.040 0.76 1.02 y j s h
11 MRF282s MRF282z motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 4321, p.o. box 5405, denver, colorado 80217. 3036752140 or 18004412447 nishigotanda, shinagawaku, tokyo 141, japan. 81354878488 mfax ? : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 internet : http://motorola.com/sps MRF282/d

▲Up To Search▲

Price & Availability of MRF282

	To Download MRF282 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .